BSC072N03LDGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

6

FET Type :

2 N-Channel (Dual)

Drain Current-Max (Abs) (ID) :

11.5A

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Surface Mount :

yes

Number of Elements :

2

Drain-source On Resistance-Max :

0.0094Ohm

Current - Continuous Drain (Id) @ 25°C :

11.5A

Pin Count :

8

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 20A, 10V

JESD-30 Code :

R-PDSO-F6

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

30V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Pbfree Code :

No

Transistor Element Material :

SILICON

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

Power - Max :

57W

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

90 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

80A

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-PowerVDFN

Base Part Number :

BSC072N03

Factory Lead Time :

16 Weeks

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 15V

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Published :

2009

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V