BSB053N03LP G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Compliant

Series :

OptiMOS™

Number of Terminations :

3

Published :

2009

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

17A Ta 71A Tc

Drain-source On Resistance-Max :

0.0053Ohm

FET Type :

N-Channel

Terminal Form :

NO LEAD

Pin Count :

3

DS Breakdown Voltage-Min :

30V

Terminal Position :

BOTTOM

Pulsed Drain Current-Max (IDM) :

284A

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

17A

Avalanche Energy Rating (Eas) :

75 mJ

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Terminal Finish :

MATTE TIN

Operating Mode :

ENHANCEMENT MODE

Package / Case :

3-WDSON

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 15V

Mounting Type :

Surface Mount

Surface Mount :

yes

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Operating Temperature :

-40°C~150°C TJ

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2.3W Ta 42W Tc

JESD-30 Code :

R-MBCC-N3

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 30A, 10V

Number of Elements :

1

Transistor Application :

SWITCHING