BSB012NE2LXIXUMA1
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- Mfr.Part #
- BSB012NE2LXIXUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 3-WDSON
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 170A 2WDSON
- Stock
- 25,796
- In Stock ：
- 25,796
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 3-WDSON
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 1.2m Ω @ 30A, 10V
- Contact Plating :
- Nickel
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5852pF @ 12V
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- OptiMOS™
- Number of Pins :
- 3
- Factory Lead Time :
- 26 Weeks
- Element Configuration :
- Single
- Rise Time :
- 6ns
- Turn-Off Delay Time :
- 34 ns
- Current - Continuous Drain (Id) @ 25°C :
- 170A Tc
- Lead Free :
- Lead Free
- Operating Temperature :
- -40°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Published :
- 2013
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Halogen Free :
- Halogen Free
- Power Dissipation-Max :
- 2.8W Ta 57W Tc
- Fall Time (Typ) :
- 4.6 ns
- JESD-609 Code :
- e4
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 170A
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 25V
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Datasheets
- BSB012NE2LXIXUMA1
N-Channel Tape & Reel (TR) 1.2m Ω @ 30A, 10V ±20V 5852pF @ 12V 82nC @ 10V 3-WDSON
BSB012NE2LXIXUMA1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5852pF @ 12V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 170A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 25V, and this device has a drainage-to-source breakdown voltage of 25VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 34 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
BSB012NE2LXIXUMA1 Features
a continuous drain current (ID) of 170A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 34 ns
BSB012NE2LXIXUMA1 Applications
There are a lot of Infineon Technologies
BSB012NE2LXIXUMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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