BSB019N03LX G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Pin Count :

3

Terminal Form :

NO LEAD

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

yes

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 30A, 10V

Reach Compliance Code :

Compliant

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Package / Case :

3-WDSON

Operating Temperature :

-40°C~150°C TJ

Avalanche Energy Rating (Eas) :

290 mJ

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

32A Ta 174A Tc

Pulsed Drain Current-Max (IDM) :

400A

Terminal Position :

BOTTOM

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

31A

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

JESD-30 Code :

R-MBCC-N3

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.0019Ohm

Input Capacitance (Ciss) (Max) @ Vds :

8400pF @ 15V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

30V

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Series :

OptiMOS™

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Published :

2009

Case Connection :

DRAIN

Power Dissipation-Max :

2.8W Ta 89W Tc

FET Type :

N-Channel