BSB012N03LX3 G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

290 mJ

JESD-609 Code :

e3

Package / Case :

3-WDSON

HTS Code :

8541.29.00.95

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0012Ohm

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

30V

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

169nC @ 10V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Surface Mount :

yes

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

39A

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

16900pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

39A Ta 180A Tc

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Operating Temperature :

-40°C~150°C TJ

Power Dissipation-Max :

2.8W Ta 89W Tc

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

400A

Number of Elements :

1

Published :

2009

Pbfree Code :

yes

Transistor Application :

SWITCHING

Terminal Position :

BOTTOM

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

JESD-30 Code :

R-MBCC-N3

Pin Count :

3

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Rds On (Max) @ Id, Vgs :

1.2m Ω @ 30A, 10V

Reach Compliance Code :

Compliant

Terminal Form :

NO LEAD

Qualification Status :

Not Qualified