BSB024N03LX G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-XBCC-N3

Pin Count :

3

Case Connection :

DRAIN

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 30A, 10V

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Number of Terminations :

3

Number of Elements :

1

Drain-source On Resistance-Max :

0.0024Ohm

Power Dissipation-Max :

2.8W Ta 78W Tc

Pulsed Drain Current-Max (IDM) :

400A

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Operating Temperature :

-40°C~150°C TJ

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

4900pF @ 15V

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Form :

NO LEAD

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

27A

Package / Case :

3-WDSON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

27A Ta 145A Tc

Avalanche Energy Rating (Eas) :

220 mJ

Published :

2009