BSB013NE2LXIXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Power Dissipation :

2.8W

Terminal Form :

NO LEAD

Current - Continuous Drain (Id) @ 25°C :

36A Ta 163A Tc

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

25V

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

DS Breakdown Voltage-Min :

25V

Pulsed Drain Current-Max (IDM) :

400A

Contact Plating :

Silver

Number of Elements :

1

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Published :

2013

Case Connection :

DRAIN

FET Type :

N-Channel

Factory Lead Time :

26 Weeks

JESD-30 Code :

R-MBCC-N3

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Rise Time :

6.4ns

Package / Case :

3-WDSON

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Qualification Status :

Not Qualified

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Element Material :

SILICON

Number of Pins :

7

JESD-609 Code :

e4

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-40°C~150°C TJ

Rds On (Max) @ Id, Vgs :

1.3m Ω @ 30A, 10V

Terminal Position :

BOTTOM

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

36A

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 12V

Power Dissipation-Max :

2.8W Ta 57W Tc