BSB044N08NN3GXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.2W Ta 78W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 30A, 10V

Halogen Free :

Halogen Free

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Terminal Form :

NO LEAD

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3.5V @ 97μA

Terminal Position :

BOTTOM

Factory Lead Time :

17 Weeks

JESD-609 Code :

e4

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

5700pF @ 40V

Number of Pins :

3

Series :

OptiMOS™

Number of Terminations :

3

FET Type :

N-Channel

Lead Free :

Lead Free

Package / Case :

3-WDSON

Rise Time :

9ns

Current - Continuous Drain (Id) @ 25°C :

18A Ta 90A Tc

Continuous Drain Current (ID) :

18A

Vgs (Max) :

±20V

Max Dual Supply Voltage :

80V

Qualification Status :

Not Qualified

Contact Plating :

Silver

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain-source On Resistance-Max :

0.0044Ohm

Transistor Element Material :

SILICON

Published :

2011

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-40°C~150°C TJ

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Threshold Voltage :

2.8V

REACH SVHC :

No SVHC

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

660 mJ