BSB012NE2LX

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

285 mJ

Package / Case :

3-WDSON

JESD-30 Code :

R-MBCC-N2

DS Breakdown Voltage-Min :

25V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

34 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Number of Pins :

7

Vgs (Max) :

±20V

Terminal Position :

BOTTOM

FET Type :

N-Channel

Turn On Delay Time :

5.7 ns

Fall Time (Typ) :

4.6 ns

Pulsed Drain Current-Max (IDM) :

400A

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain to Source Voltage (Vdss) :

25V

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

HTS Code :

8541.29.00.95

Radiation Hardening :

No

Series :

OptiMOS™

Drain-source On Resistance-Max :

0.0012Ohm

ECCN Code :

EAR99

Operating Temperature :

-40°C~150°C TJ

Number of Terminations :

2

Continuous Drain Current (ID) :

56A

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

2.8W Ta 57W Tc

Drain Current-Max (Abs) (ID) :

39A

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

1.2m Ω @ 30A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

4900pF @ 12V

Halogen Free :

Halogen Free

Surface Mount :

yes

Pin Count :

2

Pbfree Code :

yes

Published :

2011

Rise Time :

6ns

Current - Continuous Drain (Id) @ 25°C :

37A Ta 170A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V