BS170RLRPG
- Mfr.Part #
- BS170RLRPG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 500MA TO92-3
- Stock
- 1,026
- In Stock :
- 1,026
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- HTS Code :
- 8541.21.00.95
- Power Dissipation :
- 350mW
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 60V
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 200mA, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Ta
- Packaging :
- Tape and Box (TB)
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain-source On Resistance-Max :
- 5Ohm
- Drain Current-Max (Abs) (ID) :
- 0.5A
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 500mA
- Transistor Element Material :
- SILICON
- Current Rating :
- 500mA
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- BOTTOM
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 350mW Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 10V
- Vgs (Max) :
- ±20V
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Surface Mount :
- No
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Published :
- 2005
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lifecycle Status :
- OBSOLETE (Last Updated: 3 days ago)
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- BS170RLRPG

N-Channel Tape & Box (TB) 5 Ω @ 200mA, 10V ±20V 60pF @ 10V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
BS170RLRPG Overview
A device's maximum input capacitance is 60pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 500mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.Its drain current is 0.5A, and it is the maximum continuous current the device can conduct.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
BS170RLRPG Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 60V voltage
BS170RLRPG Applications
There are a lot of ON Semiconductor
BS170RLRPG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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