BS170RLRPG
- Mfr.Part #
- BS170RLRPG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 500MA TO92-3
- Stock
- 1,026
- In Stock :
- 1,026
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 60V
- Lifecycle Status :
- OBSOLETE (Last Updated: 3 days ago)
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Ta
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2005
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 10V
- Current Rating :
- 500mA
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 60V
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- 260
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Power Dissipation-Max :
- 350mW Ta
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Power Dissipation :
- 350mW
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Box (TB)
- Pbfree Code :
- yes
- Surface Mount :
- No
- HTS Code :
- 8541.21.00.95
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e1
- Continuous Drain Current (ID) :
- 500mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain-source On Resistance-Max :
- 5Ohm
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 200mA, 10V
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 0.5A
- Datasheets
- BS170RLRPG

N-Channel Tape & Box (TB) 5 Ω @ 200mA, 10V ±20V 60pF @ 10V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
BS170RLRPG Overview
A device's maximum input capacitance is 60pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 500mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.Its drain current is 0.5A, and it is the maximum continuous current the device can conduct.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
BS170RLRPG Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 60V voltage
BS170RLRPG Applications
There are a lot of ON Semiconductor
BS170RLRPG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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