BS170G
- Mfr.Part #
- BS170G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 500MA TO92-3
- Stock
- 13
- In Stock :
- 13
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 350mW Ta
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Surface Mount :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 4 ns
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Continuous Drain Current (ID) :
- 500mA
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Resistance :
- 5Ohm
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e1
- Drain to Source Breakdown Voltage :
- 60V
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 200mA, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Peak Reflow Temperature (Cel) :
- 260
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Threshold Voltage :
- 2V
- Width :
- 4.19mm
- Current Rating :
- 500mA
- Weight :
- 4.535924g
- Voltage - Rated DC :
- 60V
- Contact Plating :
- Copper, Silver, Tin
- Nominal Vgs :
- 2 V
- Number of Terminations :
- 3
- Drain Current-Max (Abs) (ID) :
- 0.5A
- Packaging :
- Tube
- Power Dissipation :
- 350mW
- Turn-Off Delay Time :
- 4 ns
- Published :
- 2005
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 10V
- Pin Count :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Height :
- 5.33mm
- Length :
- 5.2mm
- Datasheets
- BS170G
,TO-226_straightlead.jpg)
N-Channel Tube 5 Ω @ 200mA, 10V ±20V 60pF @ 10V TO-226-3, TO-92-3 (TO-226AA)
BS170G Description
BS170G power MOSFETs, created by ON Semiconductor, are able to switch between data lines quickly and amplify the signals more quickly than conventional transistors. 350 mW is the most power it can dissipate. The operating temperature range for this MOSFET transistor is -55 °C to 150 °C. The enhancement mode is used by this N channel MOSFET transistor.
BS170G Features
-
Rugged and Reliable
-
These are Pb?Free Devices
-
High Saturation Current Capability
-
Voltage Controlled Small Signal Switch
-
High Density Cell Design for Low RDS(ON)
BS170G Applications
-
Industrial
-
Automotive
-
Personal electronics
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