BS170G
- Mfr.Part #
- BS170G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 500MA TO92-3
- Stock
- 13
- In Stock :
- 13
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 5Ohm
- Threshold Voltage :
- 2V
- Turn-Off Delay Time :
- 4 ns
- JESD-609 Code :
- e1
- Surface Mount :
- No
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 500mA
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 200mA, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Ta
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 10V
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Width :
- 4.19mm
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Through Hole
- Nominal Vgs :
- 2 V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 4 ns
- Number of Pins :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Voltage - Rated DC :
- 60V
- Power Dissipation :
- 350mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 0.5A
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- Height :
- 5.33mm
- Power Dissipation-Max :
- 350mW Ta
- Weight :
- 4.535924g
- Drain to Source Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- Published :
- 2005
- FET Type :
- N-Channel
- Terminal Position :
- BOTTOM
- Current Rating :
- 500mA
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Length :
- 5.2mm
- Contact Plating :
- Copper, Silver, Tin
- Datasheets
- BS170G
,TO-226_straightlead.jpg)
N-Channel Tube 5 Ω @ 200mA, 10V ±20V 60pF @ 10V TO-226-3, TO-92-3 (TO-226AA)
BS170G Description
BS170G power MOSFETs, created by ON Semiconductor, are able to switch between data lines quickly and amplify the signals more quickly than conventional transistors. 350 mW is the most power it can dissipate. The operating temperature range for this MOSFET transistor is -55 °C to 150 °C. The enhancement mode is used by this N channel MOSFET transistor.
BS170G Features
-
Rugged and Reliable
-
These are Pb?Free Devices
-
High Saturation Current Capability
-
Voltage Controlled Small Signal Switch
-
High Density Cell Design for Low RDS(ON)
BS170G Applications
-
Industrial
-
Automotive
-
Personal electronics
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