BS170G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

500mA

Turn-Off Delay Time :

4 ns

Number of Pins :

3

Contact Plating :

Copper, Silver, Tin

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

60V

Pin Count :

3

Resistance :

5Ohm

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 10V

Vgs(th) (Max) @ Id :

3V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

60V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Packaging :

Tube

Element Configuration :

Single

Number of Elements :

1

Length :

5.2mm

Nominal Vgs :

2 V

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

RoHS Status :

RoHS Compliant

Number of Terminations :

3

ECCN Code :

EAR99

Radiation Hardening :

No

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

JESD-609 Code :

e1

Terminal Position :

BOTTOM

Power Dissipation-Max :

350mW Ta

Power Dissipation :

350mW

Height :

5.33mm

Published :

2005

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Current Rating :

500mA

Operating Temperature :

-55°C~150°C TJ

Weight :

4.535924g

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Surface Mount :

No

Width :

4.19mm

FET Type :

N-Channel

Transistor Application :

SWITCHING

Pbfree Code :

yes

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Threshold Voltage :

2V

Drain Current-Max (Abs) (ID) :

0.5A

Turn On Delay Time :

4 ns

Lead Free :

Lead Free

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V