BS170PSTOB
- Mfr.Part #
- BS170PSTOB
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 270MA E-LINE
- Stock
- 48,619
- In Stock :
- 48,619
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 0.27A
- Mount :
- Through Hole
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Weight :
- 453.59237mg
- Reach Compliance Code :
- Unknown
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 270mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 10V
- Power Dissipation :
- 625mW
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2012
- Drain-source On Resistance-Max :
- 5Ohm
- Power Dissipation-Max :
- 625mW Ta
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSIP-W3
- RoHS Status :
- RoHS Compliant
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 270mA Ta
- Voltage - Rated DC :
- 60V
- Vgs (Max) :
- ±20V
- Current Rating :
- 270mA
- Number of Terminations :
- 3
- Terminal Form :
- Wire
- Terminal Finish :
- MATTE TIN
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 200mA, 10V
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Breakdown Voltage :
- 60V
- Package / Case :
- E-Line-3
- Datasheets
- BS170PSTOB
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N-Channel Tape & Reel (TR) 5 Ω @ 200mA, 10V ±20V 60pF @ 10V E-Line-3
BS170PSTOB Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 60pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.There is no drain current on this device since the maximum continuous current it can conduct is 0.27A.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
BS170PSTOB Features
a continuous drain current (ID) of 270mA
a drain-to-source breakdown voltage of 60V voltage
BS170PSTOB Applications
There are a lot of Diodes Incorporated
BS170PSTOB applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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