BS170

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Height :

5.33mm

Resistance :

5Ohm

Contact Plating :

Copper, Silver, Tin

Power Dissipation-Max :

830mW Ta

Drain to Source Resistance :

5Ohm

Rds On (Max) @ Id, Vgs :

5Ohm @ 200mA, 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Factory Lead Time :

11 Weeks

Length :

5.2mm

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

Power Dissipation :

830mW

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Radiation Hardening :

No

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package :

TO-92-3

Number of Elements :

1

Mounting Type :

Through Hole

Weight :

4.535924g

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

60V

Input Capacitance :

24pF

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Published :

2005

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Drain to Source Voltage (Vdss) :

60V

Continuous Drain Current (ID) :

500mA

Rds On Max :

5 Ω

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Nominal Vgs :

2.1 V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3V @ 1mA

Threshold Voltage :

2.1V

Base Part Number :

BS170

Current :

5A

Packaging :

Bulk

Current Rating :

500mA

Operating Temperature :

-55°C~150°C TJ

Voltage :

60V

Width :

4.19mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

60V