BS170P

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 10V

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Turn On Delay Time :

10 ns

FET Type :

N-Channel

Turn-Off Delay Time :

10 ns

Width :

1.4mm

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

60V

Number of Channels :

1

Nominal Vgs :

3 V

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

270mA

Number of Pins :

3

Pbfree Code :

yes

Weight :

453.59237mg

Transistor Element Material :

SILICON

Factory Lead Time :

17 Weeks

Pin Count :

3

Mount :

Surface Mount, Through Hole

Drain Current-Max (Abs) (ID) :

0.27A

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

JESD-609 Code :

e3

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Published :

1997

Voltage - Rated DC :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Power Dissipation :

625mW

Packaging :

Bulk

Power Dissipation-Max :

625mW Ta

Number of Terminations :

3

Terminal Form :

Wire

Resistance :

5Ohm

Height :

1.1mm

Threshold Voltage :

3V

Length :

3mm

Vgs(th) (Max) @ Id :

3V @ 1mA

Current Rating :

270mA

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

270mA Ta