BS170
- Mfr.Part #
- BS170
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 300MA TO92-3
- Stock
- 200
- In Stock :
- 200
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 5.2mm
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Drain to Source Resistance :
- 5Ohm
- Current Rating :
- 500mA
- Width :
- 4.19mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 40pF @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage - Rated DC :
- 60V
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 830mW
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Base Part Number :
- BS170
- Resistance :
- 5Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On Max :
- 5 Ω
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Current :
- 5A
- Continuous Drain Current (ID) :
- 500mA
- Number of Elements :
- 1
- Supplier Device Package :
- TO-92-3
- Weight :
- 4.535924g
- Power Dissipation-Max :
- 830mW Ta
- Factory Lead Time :
- 11 Weeks
- RoHS Status :
- ROHS3 Compliant
- Voltage :
- 60V
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 60V
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 5Ohm @ 200mA, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging :
- Bulk
- Contact Plating :
- Copper, Silver, Tin
- Nominal Vgs :
- 2.1 V
- Element Configuration :
- Single
- Published :
- 2005
- Height :
- 5.33mm
- Threshold Voltage :
- 2.1V
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Ta
- Input Capacitance :
- 24pF
- Datasheets
- BS170

N-Channel Bulk 5Ohm @ 200mA, 10V ±20V 40pF @ 10V 60V TO-226-3, TO-92-3 (TO-226AA)
BS170 Description
These BS170 N-channel enhanced mode field effect transistors are produced using ONSemi's proprietary high cell density DMOS technology. These products are designed to minimize-state resistance while providing rugged, reliable and fast switching performance. They can be used in most applications that require up to 500 mA DC. These products are particularly suitable for low-voltage, low-current applications such as small servo motor controls, power MOSFET gate drivers and other switching applications.
BS170 Features
? High Density Cell Design for Low RDS(ON)
? Voltage Controlled Small Signal Switch
? Rugged and Reliable
? High Saturation Current Capability
? These are Pb?Free Devices
BS170 Applications
small servo motor controls
power MOSFET gate drivers
other switching applications
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