BS170RL1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2005

Mounting Type :

Through Hole

JESD-609 Code :

e1

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

0.5A

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Gate to Source Voltage (Vgs) :

20V

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

5Ohm

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain to Source Breakdown Voltage :

60V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

350mW

Continuous Drain Current (ID) :

500mA

ECCN Code :

EAR99

Vgs (Max) :

±20V

Terminal Position :

BOTTOM

Transistor Element Material :

SILICON

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 10V

Power Dissipation-Max :

350mW Ta

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

Lead Free :

Lead Free

Voltage - Rated DC :

60V

Additional Feature :

EUROPEAN PART NUMBER

Surface Mount :

No

Number of Terminations :

3

Current Rating :

500mA

RoHS Status :

RoHS Compliant

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 1mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes