BS170RL1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

350mW Ta

Qualification Status :

Not Qualified

Number of Terminations :

3

Power Dissipation :

350mW

Published :

2005

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

0.5A

Surface Mount :

No

Pbfree Code :

yes

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

500mA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Time@Peak Reflow Temperature-Max (s) :

40

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

500mA

Number of Elements :

1

ECCN Code :

EAR99

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 10V

JESD-609 Code :

e1

Drain to Source Breakdown Voltage :

60V

Drain-source On Resistance-Max :

5Ohm

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Pin Count :

3

Terminal Position :

BOTTOM

RoHS Status :

RoHS Compliant

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

EUROPEAN PART NUMBER

Voltage - Rated DC :

60V

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 1mA