BS170-D75Z

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 1mA

Base Part Number :

BS170

DS Breakdown Voltage-Min :

60V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Number of Elements :

1

Transistor Element Material :

SILICON

Surface Mount :

No

Terminal Position :

BOTTOM

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

11 Weeks

Drain-source On Resistance-Max :

5Ohm

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drain to Source Voltage (Vdss) :

60V

Feedback Cap-Max (Crss) :

10 pF

Packaging :

Tape and Box (TB)

Power Dissipation-Max :

830mW Ta

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 10V

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

0.5A

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Vgs (Max) :

±20V

JESD-30 Code :

O-PBCY-T3