BS170RLRP

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 1mA

Published :

2005

Transistor Application :

SWITCHING

Mount :

Through Hole

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

350mW

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.21.00.95

FET Type :

N-Channel

JESD-609 Code :

e0

Number of Elements :

1

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

240

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

Voltage - Rated DC :

60V

Current Rating :

500mA

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Terminations :

3

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

500mA

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Packaging :

Tape and Box (TB)

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

O-PBCY-T3

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Power Dissipation-Max :

350mW Ta

Element Configuration :

Single

Pin Count :

3

Vgs (Max) :

±20V

Terminal Position :

BOTTOM

Terminal Finish :

Tin/Lead (Sn/Pb)

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

0.5A

Drain-source On Resistance-Max :

5Ohm

Gate to Source Voltage (Vgs) :

20V