BS170RLRAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Vgs (Max) :

±20V

ECCN Code :

EAR99

Weight :

4.535924g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

BOTTOM

Length :

5.2mm

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Pbfree Code :

yes

Resistance :

5Ohm

Packaging :

Cut Tape (CT)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

350mW

Published :

2005

Vgs(th) (Max) @ Id :

3V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.5A

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 10V

Height :

5.33mm

Voltage - Rated DC :

60V

Pin Count :

3

Transistor Element Material :

SILICON

Contact Plating :

Copper, Silver, Tin

Number of Pins :

3

Surface Mount :

No

Continuous Drain Current (ID) :

500mA

Power Dissipation-Max :

350mW Ta

FET Type :

N-Channel

Lead Free :

Lead Free

Current Rating :

500mA

Nominal Vgs :

2 V

Transistor Application :

SWITCHING

Element Configuration :

Single

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

Turn-Off Delay Time :

10 ns

Turn On Delay Time :

10 ns

Width :

4.19mm

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2V

Radiation Hardening :

No