BS170RLRAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.19mm

Element Configuration :

Single

Published :

2005

JESD-609 Code :

e1

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

FET Type :

N-Channel

Power Dissipation-Max :

350mW Ta

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Number of Pins :

3

Length :

5.2mm

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 10V

Number of Terminations :

3

Transistor Element Material :

SILICON

Pbfree Code :

yes

Nominal Vgs :

2 V

Pin Count :

3

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Weight :

4.535924g

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Resistance :

5Ohm

Turn On Delay Time :

10 ns

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

BOTTOM

Radiation Hardening :

No

Threshold Voltage :

2V

Continuous Drain Current (ID) :

500mA

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 1mA

Mounting Type :

Through Hole

Power Dissipation :

350mW

Contact Plating :

Copper, Silver, Tin

Number of Elements :

1

Voltage - Rated DC :

60V

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Height :

5.33mm

Turn-Off Delay Time :

10 ns

Drain Current-Max (Abs) (ID) :

0.5A

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

Current Rating :

500mA

Drain to Source Breakdown Voltage :

60V

RoHS Status :

RoHS Compliant

Packaging :

Cut Tape (CT)

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Peak Reflow Temperature (Cel) :

260

Surface Mount :

No