BFR35APE6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

NPN

Terminal Form :

Gull wing

Gain :

10.5dB ~ 16dB

Published :

2001

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Number of Terminations :

3

Lead Free :

Lead Free

Current Rating :

45mA

Collector Emitter Voltage (VCEO) :

15V

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

2.5V

Width :

1.3mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 15mA 8V

Number of Elements :

1

Length :

2.9mm

Collector-Base Capacitance-Max :

0.55pF

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

15V

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Max Collector Current :

45mA

Operating Temperature :

150°C TJ

Collector Base Voltage (VCBO) :

20V

Frequency :

5GHz

Terminal Position :

Dual

Noise Figure (dB Typ @ f) :

1.4dB ~ 2dB @ 900MHz ~ 1.8GHz

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

280mW

JESD-609 Code :

e3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Transition Frequency :

5000MHz

ECCN Code :

EAR99

Number of Pins :

3

Halogen Free :

Not Halogen Free

Voltage - Rated DC :

15V

Height :

1mm

Power Dissipation :

280mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant