BFR183E6327HTSA1
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- Mfr.Part #
- BFR183E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- RF TRANS NPN 12V 8GHZ SOT23-3
- Stock
- 122,728
- In Stock ：
- 122,728
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Number of Pins :
- 3
- Halogen Free :
- Not Halogen Free
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BFR183
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Current Rating :
- 65mA
- Number of Elements :
- 1
- Collector-Base Capacitance-Max :
- 0.6pF
- Radiation Hardening :
- No
- Max Power Dissipation :
- 450mW
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 15mA 8V
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 2V
- Lead Free :
- Lead Free
- Max Collector Current :
- 65mA
- Collector Base Voltage (VCBO) :
- 20V
- Collector Emitter Voltage (VCEO) :
- 12V
- Published :
- 2014
- Packaging :
- Tape and Reel (TR)
- Configuration :
- Single
- Transistor Type :
- NPN
- Frequency :
- 8GHz
- Transition Frequency :
- 8000MHz
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Noise Figure (dB Typ @ f) :
- 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 12V
- Gain :
- 17.5dB
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Power Dissipation :
- 450mW
- Datasheets
- BFR183E6327HTSA1
BFR183E6327HTSA1 Documents
BFR183E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at
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