BFR182WH6327XTSA1
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- Mfr.Part #
- BFR182WH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- RF TRANS NPN 12V 8GHZ SOT323-3
- Stock
- 96,303
- In Stock ：
- 96,303
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Additional Feature :
- LOW NOISE
- Number of Terminations :
- 3
- Max Collector Current :
- 35mA
- Published :
- 2005
- Number of Pins :
- 3
- Power Dissipation :
- 250mW
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- hFE Min :
- 50
- Noise Figure (dB Typ @ f) :
- 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
- Collector Emitter Breakdown Voltage :
- 12V
- Mount :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 10mA 8V
- Number of Elements :
- 1
- Test Frequency :
- 900MHz
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 2V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Termination :
- SMD/SMT
- Transition Frequency :
- 8000MHz
- Current - Collector (Ic) (Max) :
- 35mA
- Halogen Free :
- Halogen Free
- Factory Lead Time :
- 4 Weeks
- Gain :
- 19dB
- Package / Case :
- SC-70, SOT-323
- Polarity/Channel Type :
- NPN
- Frequency :
- 8GHz
- Collector Emitter Voltage (VCEO) :
- 12V
- Configuration :
- Single
- Base Part Number :
- BFR182
- Max Power Dissipation :
- 250mW
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 20V
- Collector-Base Capacitance-Max :
- 0.5pF
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BFR182WH6327XTSA1
BFR182WH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at
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