BFR182WH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Termination :

SMD/SMT

Frequency :

8GHz

Mount :

Surface Mount

Number of Pins :

3

Additional Feature :

LOW NOISE

Transition Frequency :

8000MHz

Collector Emitter Breakdown Voltage :

12V

Base Part Number :

BFR182

Halogen Free :

Halogen Free

Test Frequency :

900MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 10mA 8V

hFE Min :

50

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

Gain :

19dB

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Terminal Position :

Dual

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

Collector Emitter Voltage (VCEO) :

12V

Mounting Type :

Surface Mount

Contact Plating :

Tin

Current - Collector (Ic) (Max) :

35mA

Collector Base Voltage (VCBO) :

20V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

250mW

Number of Elements :

1

Published :

2005

Collector-Base Capacitance-Max :

0.5pF

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Package / Case :

SC-70, SOT-323

Emitter Base Voltage (VEBO) :

2V

Configuration :

Single

Factory Lead Time :

4 Weeks

Number of Terminations :

3

Max Collector Current :

35mA

Transistor Type :

NPN

Max Power Dissipation :

250mW