BFR181WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Elements :

1

Transistor Type :

NPN

Number of Terminations :

3

Published :

2011

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

JESD-30 Code :

R-PDSO-G3

Current - Collector (Ic) (Max) :

20mA

Frequency - Transition :

8GHz

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max (Abs) :

0.175W

Reach Compliance Code :

Compliant

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 8V

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

Collector-Base Capacitance-Max :

0.5pF

Package / Case :

SC-70, SOT-323

Surface Mount :

yes

Transistor Element Material :

SILICON

Base Part Number :

BFR181

Qualification Status :

Not Qualified

Polarity/Channel Type :

NPN

Power - Max :

175mW

Terminal Position :

Dual

Terminal Form :

Gull wing

Operating Temperature :

150°C TJ

Gain :

19dB

Transition Frequency :

8000MHz

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Voltage - Collector Emitter Breakdown (Max) :

12V

RoHS Status :

RoHS Compliant

Configuration :

Single