BFP460H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Max Collector Current :

70mA

Factory Lead Time :

4 Weeks

Power - Max :

230mW

Transistor Application :

AMPLIFIER

Gain :

12.5dB ~ 26.5dB

Collector Emitter Voltage (VCEO) :

4.5V

Number of Elements :

1

Polarity/Channel Type :

NPN

Max Power Dissipation :

230mW

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Additional Feature :

LOW NOISE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

1.5V

Noise Figure (dB Typ @ f) :

0.7dB ~ 1.2dB @ 100MHz ~ 3GHz

Collector Base Voltage (VCBO) :

15V

Transistor Type :

NPN

Transition Frequency :

22000MHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Mount :

Surface Mount

Max Breakdown Voltage :

5.8V

Number of Pins :

4

ECCN Code :

EAR99

Number of Terminations :

4

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

5.8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Configuration :

Single

Frequency :

22GHz

Published :

2005

DC Current Gain (hFE) (Min) @ Ic, Vce :

90 @ 20mA 3V

Power Dissipation :

200mW

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Package / Case :

SC-82A, SOT-343

Halogen Free :

Halogen Free

Base Part Number :

BFP460

Mounting Type :

Surface Mount