BF959RL1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Highest Frequency Band :

VERY HIGH FREQUENCY B

Max Collector Current :

100mA

Mount :

Through Hole

Number of Terminations :

3

Noise Figure (dB Typ @ f) :

3dB @ 200MHz

Terminal Finish :

Tin/Lead (Sn/Pb)

HTS Code :

8541.21.00.75

Reach Compliance Code :

not_compliant

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

240

Pbfree Code :

No

hFE Min :

35

Terminal Position :

BOTTOM

Lead Free :

Contains Lead

RoHS Status :

Non-RoHS Compliant

Emitter Base Voltage (VEBO) :

3V

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Transistor Application :

AMPLIFIER

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 weeks ago)

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

NPN

Published :

2005

Time@Peak Reflow Temperature-Max (s) :

30

Collector Emitter Voltage (VCEO) :

20V

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 20mA 10V

Transition Frequency :

700MHz

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Polarity/Channel Type :

NPN

Pin Count :

3

JESD-609 Code :

e0

Gain Bandwidth Product :

700MHz

Mounting Type :

Through Hole

Additional Feature :

EUROPEAN PART NUMBER

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

625mW

Current Rating :

100mA

Collector Emitter Breakdown Voltage :

20V

Collector Base Voltage (VCBO) :

30V

Collector Emitter Saturation Voltage :

1V

Transistor Element Material :

SILICON

Number of Pins :

3

Voltage - Rated DC :

20V

Base Part Number :

BF959