BF959

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

hFE Min :

35

Emitter Base Voltage (VEBO) :

3V

Max Power Dissipation :

625mW

RoHS Status :

Non-RoHS Compliant

Reach Compliance Code :

not_compliant

Gain Bandwidth Product :

700MHz

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Transistor Application :

AMPLIFIER

Noise Figure (dB Typ @ f) :

3dB @ 200MHz

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

20V

Published :

2005

Peak Reflow Temperature (Cel) :

240

Terminal Finish :

Tin/Lead (Sn/Pb)

Collector Emitter Voltage (VCEO) :

20V

Polarity/Channel Type :

NPN

Pin Count :

3

Packaging :

Bulk

Max Collector Current :

100mA

Number of Terminations :

3

JESD-609 Code :

e0

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

HTS Code :

8541.21.00.75

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Collector Base Voltage (VCBO) :

30V

Mount :

Through Hole

Highest Frequency Band :

VERY HIGH FREQUENCY B

Number of Pins :

3

Lead Free :

Contains Lead

Qualification Status :

Not Qualified

Collector Emitter Saturation Voltage :

1V

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 20mA 10V

Terminal Position :

BOTTOM

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Current Rating :

100mA

Voltage - Rated DC :

20V

Base Part Number :

BF959

Transition Frequency :

700MHz

Pbfree Code :

No