BF959G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Saturation Voltage :

1V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Lifecycle Status :

OBSOLETE (Last Updated: 4 days ago)

Gain Bandwidth Product :

700MHz

Base Part Number :

BF959

Highest Frequency Band :

VERY HIGH FREQUENCY B

Number of Terminations :

3

hFE Min :

35

Transistor Application :

AMPLIFIER

Current Rating :

100mA

Transition Frequency :

700MHz

Lead Free :

Lead Free

Max Collector Current :

100mA

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 20mA 10V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Polarity/Channel Type :

NPN

Published :

2005

Noise Figure (dB Typ @ f) :

3dB @ 200MHz

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

20V

JESD-609 Code :

e1

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

HTS Code :

8541.21.00.75

Terminal Position :

BOTTOM

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Emitter Base Voltage (VEBO) :

3V

Collector Base Voltage (VCBO) :

30V

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Packaging :

Bulk

Transistor Element Material :

SILICON

Voltage - Rated DC :

20V

Element Configuration :

Single

Max Power Dissipation :

625mW

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

20V

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

RoHS Compliant

Number of Pins :

3

ECCN Code :

EAR99