BF776H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Published :

2010

JESD-30 Code :

R-PDSO-G4

Collector Emitter Voltage (VCEO) :

4V

Frequency :

40GHz

Max Breakdown Voltage :

4.7V

Radiation Hardening :

No

Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 30mA 3V

Terminal Form :

Gull wing

Case Connection :

Emitter

Mount :

Surface Mount

Factory Lead Time :

4 Weeks

Max Power Dissipation :

200mW

Max Collector Current :

50mA

Package / Case :

SC-82A, SOT-343

Base Part Number :

BF776

Transition Frequency :

46000MHz

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

1.2V

Gain :

24dB

Collector Emitter Breakdown Voltage :

4.7V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

13V

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

200mW

Transistor Element Material :

SILICON

Frequency - Transition :

46GHz

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz

Operating Temperature :

150°C TJ

Transistor Application :

AMPLIFIER

Number of Terminations :

4

Terminal Position :

Dual

Pbfree Code :

yes

Collector-Base Capacitance-Max :

0.2pF

Polarity/Channel Type :

NPN

Transistor Type :

NPN