BF771E6765N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Product Status :

Active

Current - Collector (Ic) (Max) :

80mA

hFE Min :

70

Power - Max :

580mW

Frequency :

8 GHz

Continuous Collector Current :

80 mA

Transistor Type :

NPN

Frequency - Transition :

8GHz

Gain :

15dB

Power Dissipation :

580 mW

Operating Temperature :

150°C (TJ)

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Supplier Device Package :

PG-SOT23-3-4

Mounting Type :

Surface Mount

Max Operating Temperature :

150 °C

Collector Emitter Voltage (VCEO) :

12 V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Polarity :

NPN

Max Frequency :

8 GHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA, 8V

Voltage - Collector Emitter Breakdown (Max) :

12V

RoHS :

Non-Compliant

Package :

Bulk

Emitter Base Voltage (VEBO) :

2 V

Series :

Automotive, AEC-Q101

Min Operating Temperature :

-65 °C