BF771E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation :

580mW

Max Collector Current :

80mA

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

20V

Transistor Type :

NPN

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

2V

Transistor Element Material :

SILICON

Number of Pins :

3

Gain :

10dB ~ 15dB

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Breakdown Voltage :

12V

Voltage - Rated DC :

12V

Factory Lead Time :

4 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

NPN

Current Rating :

80mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Power Dissipation :

580mW

Collector Emitter Voltage (VCEO) :

12V

Contact Plating :

Tin

Number of Terminations :

3

Published :

2007

Pbfree Code :

yes

Qualification Status :

Not Qualified

Number of Elements :

1

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Lead Free :

Lead Free

Transition Frequency :

8000MHz

Frequency :

8GHz

Operating Temperature :

150°C TJ

Configuration :

Single

Mount :

Surface Mount