BF771E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Frequency :

8GHz

Gain :

10dB ~ 15dB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

Published :

2007

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Number of Terminations :

3

Terminal Position :

Dual

Max Power Dissipation :

580mW

Voltage - Rated DC :

12V

Max Collector Current :

80mA

Emitter Base Voltage (VEBO) :

2V

Configuration :

Single

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

12V

Current Rating :

80mA

Factory Lead Time :

4 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transition Frequency :

8000MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation :

580mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Number of Pins :

3

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Collector Base Voltage (VCBO) :

20V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

12V

Mount :

Surface Mount

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Number of Elements :

1

Operating Temperature :

150°C TJ