BF517E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Operating Temperature (Max) :

150°C

Polarity/Channel Type :

NPN

DC Current Gain-Min (hFE) :

25

Collector-Emitter Voltage-Max :

15V

JESD-30 Code :

R-PDSO-G3

Collector-Base Capacitance-Max :

0.75pF

Pbfree Code :

yes

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Surface Mount :

yes

Number of Terminals :

3

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max (Abs) :

0.28W

Collector Current-Max (IC) :

0.025A

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

ECCN Code :

EAR99

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Transistor Application :

AMPLIFIER

Configuration :

Single

Transition Frequency :

2000MHz