BF513,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

FET Technology :

JUNCTION

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Frequency :

100MHz

Number of Terminations :

3

Current Rating (Amps) :

30mA

Operating Mode :

Depletion Mode

Noise Figure :

1.5dB

Qualification Status :

Not Qualified

Pin Count :

3

Current - Test :

5mA

JESD-30 Code :

R-PDSO-G3

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Power Dissipation-Max (Abs) :

0.25W

Voltage - Test :

10V

Packaging :

Tape and Reel (TR)

Transistor Type :

N-Channel JFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature (Max) :

150°C

Additional Feature :

LOW NOISE

HTS Code :

8541.21.00.75

DS Breakdown Voltage-Min :

20V

Drain Current-Max (Abs) (ID) :

0.03A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

260

Configuration :

Single

Published :

1997

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Voltage - Rated :

20V

Feedback Cap-Max (Crss) :

0.4 pF

Terminal Form :

Gull wing

Transistor Application :

AMPLIFIER

Terminal Position :

Dual