BF517E6327HTSA1
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- Mfr.Part #
- BF517E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.025A SOT23
- Stock
- 10,974
- In Stock ：
- 10,974
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- RoHS Status :
- RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 2mA 1V
- Collector Base Voltage (VCBO) :
- 20V
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Power Dissipation :
- 280mW
- Published :
- 2011
- Pbfree Code :
- yes
- Transition Frequency :
- 2000MHz
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Factory Lead Time :
- 12 Weeks
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 15V
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 25mA
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 1mA, 10mA
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector-Base Capacitance-Max :
- 0.75pF
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 15V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 280mW
- Transistor Type :
- NPN
- Frequency :
- 2.5GHz
- ECCN Code :
- EAR99
- Current - Collector (Ic) (Max) :
- 25mA
- Emitter Base Voltage (VEBO) :
- 2.5V
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Datasheets
- BF517E6327HTSA1
BF517E6327HTSA1 Documents
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BF517E6327HTSA1 Overview
This device has a DC current gain of 40 @ 2mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 2.5V.As you can see, the part has a transition frequency of 2000MHz.A maximum collector current of 25mA volts is possible.
BF517E6327HTSA1 Features
the DC current gain for this device is 40 @ 2mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA
the emitter base voltage is kept at 2.5V
a transition frequency of 2000MHz
BF517E6327HTSA1 Applications
There are a lot of Infineon Technologies
BF517E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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