BF517E6327HTSA1
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- Mfr.Part #
- BF517E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.025A SOT23
- Stock
- 10,974
- In Stock ：
- 10,974
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 2.5GHz
- Number of Pins :
- 3
- Current - Collector (Ic) (Max) :
- 25mA
- Max Power Dissipation :
- 280mW
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Configuration :
- Single
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 2.5V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 1mA, 10mA
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Collector-Base Capacitance-Max :
- 0.75pF
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 25mA
- Polarity/Channel Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Published :
- 2011
- Power Dissipation :
- 280mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 20V
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 15V
- Collector Emitter Breakdown Voltage :
- 15V
- Transition Frequency :
- 2000MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 2mA 1V
- Factory Lead Time :
- 12 Weeks
- Datasheets
- BF517E6327HTSA1
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BF517E6327HTSA1 Overview
This device has a DC current gain of 40 @ 2mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 2.5V.As you can see, the part has a transition frequency of 2000MHz.A maximum collector current of 25mA volts is possible.
BF517E6327HTSA1 Features
the DC current gain for this device is 40 @ 2mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA
the emitter base voltage is kept at 2.5V
a transition frequency of 2000MHz
BF517E6327HTSA1 Applications
There are a lot of Infineon Technologies
BF517E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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