BF517E6327HTSA1
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- Mfr.Part #
- BF517E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.025A SOT23
- Stock
- 10,974
- In Stock ：
- 10,974
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 2.5V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 20V
- Radiation Hardening :
- No
- Frequency :
- 2.5GHz
- Power Dissipation :
- 280mW
- Transition Frequency :
- 2000MHz
- Collector-Base Capacitance-Max :
- 0.75pF
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 15V
- Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 25mA
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Max Power Dissipation :
- 280mW
- Factory Lead Time :
- 12 Weeks
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2011
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 2mA 1V
- Terminal Form :
- Gull wing
- Current - Collector (Ic) (Max) :
- 25mA
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 1mA, 10mA
- Datasheets
- BF517E6327HTSA1
BF517E6327HTSA1 Documents
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BF517E6327HTSA1 Overview
This device has a DC current gain of 40 @ 2mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 2.5V.As you can see, the part has a transition frequency of 2000MHz.A maximum collector current of 25mA volts is possible.
BF517E6327HTSA1 Features
the DC current gain for this device is 40 @ 2mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA
the emitter base voltage is kept at 2.5V
a transition frequency of 2000MHz
BF517E6327HTSA1 Applications
There are a lot of Infineon Technologies
BF517E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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