BDX54BG
- Mfr.Part #
- BDX54BG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 8A TO220
- Stock
- 95
- In Stock :
- 95
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2001
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 500μA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Width :
- 4.83mm
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 80V
- Factory Lead Time :
- 2 Weeks
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Power - Max :
- 65W
- Package / Case :
- TO-220-3
- Base Part Number :
- BDX54
- Voltage - Rated DC :
- -80V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Height :
- 15.75mm
- JESD-609 Code :
- e3
- Weight :
- 6.000006g
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 65W
- Transition Frequency :
- 4MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP - Darlington
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Surface Mount :
- No
- Lead Free :
- Lead Free
- Length :
- 10.53mm
- Polarity :
- PNP
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 80V
- Current Rating :
- -8A
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- Collector Emitter Saturation Voltage :
- 2V
- Number of Terminations :
- 3
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Collector Emitter Breakdown Voltage :
- 80V
- Operating Temperature :
- -65°C~150°C TJ
- Max Collector Current :
- 8A
- hFE Min :
- 750
- Datasheets
- BDX54BG

PNP - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX54BG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 3A 3V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 4MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 8A volts.
BDX54BG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 4MHz
BDX54BG Applications
There are a lot of ON Semiconductor
BDX54BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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