BDX54BG

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Mfr.Part #
BDX54BG
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP DARL 80V 8A TO220
Stock
95
In Stock :
95

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2001
Pbfree Code :
yes
Case Connection :
COLLECTOR
Peak Reflow Temperature (Cel) :
260
Current - Collector Cutoff (Max) :
500μA
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Finish :
Tin (Sn)
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Width :
4.83mm
Pin Count :
3
REACH SVHC :
No SVHC
Max Breakdown Voltage :
80V
Factory Lead Time :
2 Weeks
ECCN Code :
EAR99
Mounting Type :
Through Hole
Radiation Hardening :
No
Number of Elements :
1
Power - Max :
65W
Package / Case :
TO-220-3
Base Part Number :
BDX54
Voltage - Rated DC :
-80V
Vce Saturation (Max) @ Ib, Ic :
2V @ 12mA, 3A
Height :
15.75mm
JESD-609 Code :
e3
Weight :
6.000006g
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
65W
Transition Frequency :
4MHz
Collector Emitter Voltage (VCEO) :
80V
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
PNP - Darlington
Element Configuration :
Single
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Surface Mount :
No
Lead Free :
Lead Free
Length :
10.53mm
Polarity :
PNP
Transistor Application :
AMPLIFIER
Emitter Base Voltage (VEBO) :
5V
Collector Base Voltage (VCBO) :
80V
Current Rating :
-8A
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-220AB
Packaging :
Tube
Collector Emitter Saturation Voltage :
2V
Number of Terminations :
3
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Collector Emitter Breakdown Voltage :
80V
Operating Temperature :
-65°C~150°C TJ
Max Collector Current :
8A
hFE Min :
750
Datasheets
BDX54BG
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX54BG from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Base Part Number:BDX54, Number of Pins:3, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, BDX54BG pinout, BDX54BG datasheet PDF, BDX54BG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX54BG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX54BG


PNP - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX54BG Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 3A 3V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 4MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 8A volts.

BDX54BG Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 4MHz


BDX54BG Applications


There are a lot of ON Semiconductor
BDX54BG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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