BDX54B-S

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Mfr.Part #
BDX54B-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP DARL 80V 8A TO220
Stock
15,721
In Stock :
15,721

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity :
PNP
Current - Collector (Ic) (Max) :
8A
Mount :
Through Hole
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
500μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
RoHS Status :
ROHS3 Compliant
Collector Emitter Voltage (VCEO) :
80V
Power - Max :
2W
Vce Saturation (Max) @ Ib, Ic :
2V @ 12mA, 3A
Voltage - Collector Emitter Breakdown (Max) :
80V
Operating Temperature :
-65°C~150°C TJ
Min Operating Temperature :
-65°C
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
80V
Collector Emitter Saturation Voltage :
2V
Packaging :
Tube
Collector Base Voltage (VCBO) :
80V
Max Collector Current :
8A
hFE Min :
750
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Number of Elements :
1
Max Power Dissipation :
2W
Radiation Hardening :
No
Supplier Device Package :
TO-220
Published :
1993
Transistor Type :
PNP - Darlington
Max Operating Temperature :
150°C
Emitter Base Voltage (VEBO) :
5V
Base Part Number :
BDX54
Datasheets
BDX54B-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BDX54B-S from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-65°C~150°C TJ, Base Part Number:BDX54, BDX54B-S pinout, BDX54B-S datasheet PDF, BDX54B-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BDX54B-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BDX54B-S


PNP - Darlington -65°C~150°C TJ 500μA 1 Elements TO-220-3 Tube Through Hole

BDX54B-S Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 3A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 12mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.TO-220 is the supplier device package for this product.This device displays a 80V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 8A volts.

BDX54B-S Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the supplier device package of TO-220


BDX54B-S Applications


There are a lot of Bourns Inc.
BDX54B-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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