BD17910STU
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- Mfr.Part #
- BD17910STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A TO126-3
- Stock
- 1,646
- In Stock ：
- 1,646
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- 80V
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 6 Weeks
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Transistor Element Material :
- SILICON
- Frequency :
- 3MHz
- Max Collector Current :
- 3A
- Published :
- 2017
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- JESD-30 Code :
- R-PSFM-T3
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Terminations :
- 3
- Packaging :
- Tube
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- JESD-609 Code :
- e3
- Package / Case :
- TO-225AA, TO-126-3
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Base Part Number :
- BD179
- Transition Frequency :
- 3MHz
- Collector Emitter Saturation Voltage :
- 800mV
- Pbfree Code :
- yes
- Power Dissipation :
- 30W
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Gain Bandwidth Product :
- 3MHz
- Current Rating :
- 3A
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Max Power Dissipation :
- 30W
- hFE Min :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Weight :
- 761mg
- Datasheets
- BD17910STU
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD17910STU Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
BD17910STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD17910STU Applications
There are a lot of ON Semiconductor
BD17910STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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