BC860C,235
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- Mfr.Part #
- BC860C,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO236AB
- Stock
- 3,253
- In Stock ：
- 3,253
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 45V
- Max Collector Current :
- 100mA
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- BC860
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Power Dissipation :
- 250mW
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Emitter Voltage (VCEO) :
- 45V
- Power Dissipation :
- 250mW
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Series :
- Automotive, AEC-Q101
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BC860C,235
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC860C,235 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC860C,235 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC860C,235 Applications
There are a lot of Nexperia USA Inc.
BC860C,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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