BC860BWE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Max Operating Temperature :

150 °C

Emitter Base Voltage (VEBO) :

5 V

Collector-Emitter Voltage-Max :

45 V

Current - Collector Cutoff (Max) :

15nA

Surface Mount :

yes

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Element Configuration :

Single

Min Operating Temperature :

-65 °C

JESD-609 Code :

e3

Power - Max :

330 mW

Transition Frequency :

250

JESD-30 Code :

R-PDSO-G3

Frequency - Transition :

250MHz

Terminal Form :

Gull wing

Voltage Rating (DC) :

45 V

Max Power Dissipation :

250 mW

Mounting Type :

Surface Mount

Package Shape :

RECTANGULAR

Polarity :

PNP

Peak Reflow Temperature (Cel) :

260

Product Status :

Active

Collector Emitter Breakdown Voltage :

45 V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Power Dissipation :

330

Continuous Collector Current :

100

Terminal Finish :

MATTE TIN

Number of Pins :

3

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

45 V

Pbfree Code :

yes

Additional Feature :

LOW NOISE

Supplier Device Package :

PG-SOT23

Transistor Type :

PNP

Qualification Status :

COMMERCIAL

Mount :

Surface Mount

Max Collector Current :

100 mA

Voltage - Collector Emitter Breakdown (Max) :

45 V

Operating Temperature :

150°C (TJ)

Frequency :

250 MHz

Transistor Polarity :

PNP

Configuration :

Single

Collector Current-Max (IC) :

0.1 A

Current Rating :

100 mA

Gain Bandwidth Product :

250 MHz

RoHS :

Compliant

Collector Base Voltage (VCBO) :

50 V

Packaging :

Tape and Reel

DC Current Gain-Min (hFE) :

220

Current - Collector (Ic) (Max) :

100 mA

Series :

-

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Number of Terminals :

3

Polarity/Channel Type :

PNP

Package :

Bulk

Manufacturer :

Rochester Electronics LLC

Terminal Position :

Dual