BC860BW,115
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- Mfr.Part #
- BC860BW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT323
- Stock
- 29,728
- In Stock ：
- 29,728
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Base Part Number :
- BC860
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Power Dissipation :
- 200mW
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Collector-Base Capacitance-Max :
- 5pF
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 100MHz
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- Series :
- Automotive, AEC-Q101
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 100mA
- Published :
- 2009
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Package / Case :
- SC-70, SOT-323
- Number of Pins :
- 3
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 100MHz
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Datasheets
- BC860BW,115
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC860BW,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC860BW,115 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC860BW,115 Applications
There are a lot of Nexperia USA Inc.
BC860BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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