BC860B
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- Mfr.Part #
- BC860B
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 9,000
- In Stock ：
- 9,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Automotive, AEC-Q101
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Power Dissipation :
- 250mW
- Transition Frequency :
- 100MHz
- Power Dissipation :
- 250mW
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Terminal Position :
- Dual
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Base Part Number :
- BC860
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2005
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 50V
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 100MHz
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BC860B
BC860B Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC860B,235 Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC860B,235 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC860B,235 Applications
There are a lot of Nexperia USA Inc.
BC860B,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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