BC860BE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tape and Reel (TR)

RoHS :

Compliant

Package Quantity :

3000

Radiation Hardening :

No

Halogen Free :

Not Halogen Free

Continuous Collector Current :

100

Length :

2.9 mm

Max Operating Temperature :

150 °C

Height :

1 mm

Mount :

Surface Mount

Max Power Dissipation :

330 mW

Minimum Operating Temperature :

- 65 C

Configuration :

Single

Technology :

Si

Current Rating :

-100 mA

Maximum Operating Temperature :

+ 150 C

Series :

BC860

Transistor Polarity :

PNP

Brand :

Infineon Technologies

Package / Case :

SOT23

Max Breakdown Voltage :

45 V

Number of Elements :

1

Min Operating Temperature :

-65 °C

Polarity :

PNP

Collector Emitter Voltage (VCEO) :

45 V

Manufacturer :

Infineon

Collector Emitter Saturation Voltage :

650 mV

Mounting Style :

SMD/SMT

Lifecycle Status :

NRND (Last Updated: 2 years ago)

RoHS Status :

RoHS Compliant

Product Type :

BJTs - Bipolar Transistors

Collector Emitter Breakdown Voltage :

45 V

Frequency :

250 MHz

Number of Pins :

3

Voltage Rating (DC) :

-45 V

Subcategory :

Transistors

Collector Base Voltage (VCBO) :

50 V

Product Category :

Bipolar Transistors - BJT

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

5 V

Max Frequency :

250 MHz

Lead Free :

Lead Free

Transition Frequency :

250

Width :

1.3 mm

Max Collector Current :

100 mA

Power Dissipation :

330