BC860B,235
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- Mfr.Part #
- BC860B,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA BC860B - SMALL SIGNAL B
- Stock
- 56,648
- In Stock ：
- 56,648
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Base Part Number :
- BC860
- Published :
- 2005
- Power Dissipation :
- 250mW
- Pin Count :
- 3
- Max Collector Current :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Transition Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 250mW
- Mount :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Datasheets
- BC860B,235
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC860B,235 Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC860B,235 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC860B,235 Applications
There are a lot of Nexperia USA Inc.
BC860B,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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