BC860B,235
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- Mfr.Part #
- BC860B,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA BC860B - SMALL SIGNAL B
- Stock
- 56,648
- In Stock ：
- 56,648
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- BC860
- Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 250mW
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Contact Plating :
- Tin
- Published :
- 2005
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 100mA
- Gain Bandwidth Product :
- 100MHz
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 50V
- Power Dissipation :
- 250mW
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Series :
- Automotive, AEC-Q101
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Datasheets
- BC860B,235
BC860B,235 Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC860B,235 Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC860B,235 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC860B,235 Applications
There are a lot of Nexperia USA Inc.
BC860B,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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