BC860BW,115
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- Mfr.Part #
- BC860BW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC860BW - SMALL SIG
- Stock
- 29,728
- In Stock ：
- 29,728
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Type :
- PNP
- Frequency :
- 100MHz
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 45V
- Transition Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Power Dissipation :
- 200mW
- Published :
- 2009
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Package / Case :
- SC-70, SOT-323
- Series :
- Automotive, AEC-Q101
- Factory Lead Time :
- 4 Weeks
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 200mW
- JESD-609 Code :
- e3
- Base Part Number :
- BC860
- Collector-Base Capacitance-Max :
- 5pF
- Datasheets
- BC860BW,115
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC860BW,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC860BW,115 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC860BW,115 Applications
There are a lot of Nexperia USA Inc.
BC860BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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