BC860BW,115
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- Mfr.Part #
- BC860BW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC860BW - SMALL SIG
- Stock
- 29,728
- In Stock ：
- 29,728
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- SC-70, SOT-323
- Number of Terminations :
- 3
- Collector-Base Capacitance-Max :
- 5pF
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 50V
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 100MHz
- Mount :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Power Dissipation :
- 200mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Form :
- Gull wing
- Base Part Number :
- BC860
- Series :
- Automotive, AEC-Q101
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Published :
- 2009
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Pin Count :
- 3
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 200mW
- Factory Lead Time :
- 4 Weeks
- Datasheets
- BC860BW,115
BC860BW,115 Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC860BW,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC860BW,115 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC860BW,115 Applications
There are a lot of Nexperia USA Inc.
BC860BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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