BC860BW,115
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- Mfr.Part #
- BC860BW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC860BW - SMALL SIG
- Stock
- 29,728
- In Stock ：
- 29,728
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 45V
- Max Collector Current :
- 100mA
- Collector-Base Capacitance-Max :
- 5pF
- Series :
- Automotive, AEC-Q101
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- SC-70, SOT-323
- Transistor Type :
- PNP
- Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Power Dissipation :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Transition Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Base Part Number :
- BC860
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 45V
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 200mW
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 50V
- Gain Bandwidth Product :
- 100MHz
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- BC860BW,115
BC860BW,115 Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC860BW,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC860BW,115 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC860BW,115 Applications
There are a lot of Nexperia USA Inc.
BC860BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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