BC860BW,115
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- Mfr.Part #
- BC860BW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC860BW - SMALL SIG
- Stock
- 29,728
- In Stock ：
- 29,728
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Series :
- Automotive, AEC-Q101
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- SC-70, SOT-323
- Number of Terminations :
- 3
- Published :
- 2009
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Base Voltage (VCBO) :
- 50V
- Frequency :
- 100MHz
- Max Collector Current :
- 100mA
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 200mW
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- BC860
- Collector-Base Capacitance-Max :
- 5pF
- Collector Emitter Voltage (VCEO) :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Datasheets
- BC860BW,115
BC860BW,115 Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC860BW,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC860BW,115 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC860BW,115 Applications
There are a lot of Nexperia USA Inc.
BC860BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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