BC63916
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- Mfr.Part #
- BC63916
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO92-3
- Stock
- 2,177
- In Stock ：
- 2,177
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Power Dissipation :
- 1W
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- BC639
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current Rating :
- 1A
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Voltage - Rated DC :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Frequency :
- 100MHz
- Number of Terminations :
- 3
- Weight :
- 201mg
- Mount :
- Through Hole
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Max Collector Current :
- 1A
- Gain Bandwidth Product :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 80V
- hFE Min :
- 100
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Datasheets
- BC63916
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC63916 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.In the part, the transition frequency is 100MHz.A maximum collector current of 1A volts can be achieved.
BC63916 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
BC63916 Applications
There are a lot of ON Semiconductor
BC63916 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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