BC639,112

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Collector Emitter Breakdown (Max) :

80V

Number of Terminations :

3

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

100nA ICBO

Qualification Status :

Not Qualified

Published :

2007

Pin Count :

3

Configuration :

Single

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Transistor Element Material :

SILICON

Frequency - Transition :

180MHz

Power Dissipation-Max (Abs) :

0.8W

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Power - Max :

830mW

Transistor Application :

SWITCHING

Transition Frequency :

180MHz

Peak Reflow Temperature (Cel) :

250

Transistor Type :

NPN

Polarity/Channel Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

VCEsat-Max :

0.5 V

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

No

ECCN Code :

EAR99

Current - Collector (Ic) (Max) :

1A

Operating Temperature :

150°C TJ

Packaging :

Bulk

Base Part Number :

BC639

Number of Elements :

1

JESD-30 Code :

O-PBCY-T3

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.21.00.75