BC638,112

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Mfr.Part #
BC638,112
Manufacturer
NXP Semiconductors
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP 60V 1A TO92-3
Stock
24,509
In Stock :
24,509

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
HTS Code :
8541.21.00.75
Transition Frequency :
145MHz
JESD-30 Code :
O-PBCY-T3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Unknown
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
JESD-609 Code :
e3
Frequency - Transition :
100MHz
Configuration :
Single
Current - Collector (Ic) (Max) :
1A
Mounting Type :
Through Hole
Polarity/Channel Type :
PNP
Packaging :
Bulk
Operating Temperature :
150°C TJ
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Power - Max :
830mW
Pbfree Code :
yes
Pin Count :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
VCEsat-Max :
0.5 V
Voltage - Collector Emitter Breakdown (Max) :
60V
Qualification Status :
Not Qualified
Power Dissipation-Max (Abs) :
0.8W
Terminal Finish :
Matte Tin (Sn)
Transistor Application :
SWITCHING
Surface Mount :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
63 @ 150mA 2V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Position :
BOTTOM
Number of Terminations :
3
Transistor Element Material :
SILICON
Base Part Number :
BC638
Transistor Type :
PNP
Published :
2004
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors BC638,112 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Terminations:3, Base Part Number:BC638, BC638,112 pinout, BC638,112 datasheet PDF, BC638,112 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors BC638,112 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BC638,112


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

BC638,112 Overview


This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 145MHz.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.

BC638,112 Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 145MHz


BC638,112 Applications


There are a lot of NXP USA Inc.
BC638,112 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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