BC638,112
- Mfr.Part #
- BC638,112
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A TO92-3
- Stock
- 24,509
- In Stock :
- 24,509
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Power Dissipation-Max (Abs) :
- 0.8W
- Transition Frequency :
- 145MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- HTS Code :
- 8541.21.00.75
- Base Part Number :
- BC638
- Number of Elements :
- 1
- Surface Mount :
- No
- Packaging :
- Bulk
- JESD-30 Code :
- O-PBCY-T3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Qualification Status :
- Not Qualified
- Frequency - Transition :
- 100MHz
- Configuration :
- Single
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Reach Compliance Code :
- Unknown
- Current - Collector (Ic) (Max) :
- 1A
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Power - Max :
- 830mW
- Terminal Position :
- BOTTOM
- Pbfree Code :
- yes
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- VCEsat-Max :
- 0.5 V
- ECCN Code :
- EAR99
- Published :
- 2004
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BC638,112

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC638,112 Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 145MHz.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.
BC638,112 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 145MHz
BC638,112 Applications
There are a lot of NXP USA Inc.
BC638,112 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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