BC637_L34Z
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- Mfr.Part #
- BC637_L34Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A TO92-3
- Stock
- 42,452
- In Stock ：
- 42,452
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Frequency - Transition :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Power - Max :
- 1W
- Base Part Number :
- BC637
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Supplier Device Package :
- TO-92-3
- Packaging :
- Bulk
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 1A
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Operating Temperature :
- 150°C TJ
- Datasheets
- BC637_L34Z
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC637_L34Z Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BC637_L34Z Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-92-3
BC637_L34Z Applications
There are a lot of ON Semiconductor
BC637_L34Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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