BC373RL1G
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- Mfr.Part #
- BC373RL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 1A TO92
- Stock
- 11,401
- In Stock ：
- 11,401
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Transistor Type :
- NPN - Darlington
- Surface Mount :
- No
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Additional Feature :
- EUROPEAN PART NUMBER
- Height :
- 5.33mm
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Voltage (VCEO) :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Frequency - Transition :
- 200MHz
- hFE Min :
- 8000
- Width :
- 4.19mm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Contact Plating :
- Copper, Silver, Tin
- JESD-609 Code :
- e1
- Current Rating :
- 1A
- Collector Emitter Saturation Voltage :
- 1.1V
- REACH SVHC :
- No SVHC
- Base Part Number :
- BC373
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 250μA, 250mA
- Power Dissipation :
- 1.5W
- Length :
- 5.2mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins :
- 3
- Polarity :
- NPN
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 80V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 80V
- Pbfree Code :
- yes
- Pin Count :
- 3
- Max Power Dissipation :
- 625mW
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2007
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 200MHz
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 80V
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- Max Collector Current :
- 1A
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BC373RL1G
BC373RL1G Documents
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC373RL1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10000 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.1V @ 250μA, 250mA.The emitter base voltage can be kept at 12V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BC373RL1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 250μA, 250mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 200MHz
BC373RL1G Applications
There are a lot of ON Semiconductor
BC373RL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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