BC373RL1G
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- Mfr.Part #
- BC373RL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 1A TO92
- Stock
- 11,401
- In Stock ：
- 11,401
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Additional Feature :
- EUROPEAN PART NUMBER
- Collector Emitter Voltage (VCEO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Transistor Type :
- NPN - Darlington
- Width :
- 4.19mm
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 250μA, 250mA
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Polarity :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 80V
- Length :
- 5.2mm
- Element Configuration :
- Single
- hFE Min :
- 8000
- Emitter Base Voltage (VEBO) :
- 12V
- Max Breakdown Voltage :
- 80V
- Transistor Application :
- AMPLIFIER
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 80V
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- Transition Frequency :
- 200MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e1
- Published :
- 2007
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 625mW
- Collector Emitter Saturation Voltage :
- 1.1V
- Power Dissipation :
- 1.5W
- Lead Free :
- Lead Free
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Base Part Number :
- BC373
- Surface Mount :
- No
- Pbfree Code :
- yes
- Height :
- 5.33mm
- Contact Plating :
- Copper, Silver, Tin
- Terminal Position :
- BOTTOM
- Frequency - Transition :
- 200MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- RoHS Status :
- RoHS Compliant
- Collector Base Voltage (VCBO) :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 1A
- Datasheets
- BC373RL1G
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC373RL1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10000 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.1V @ 250μA, 250mA.The emitter base voltage can be kept at 12V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BC373RL1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 250μA, 250mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 200MHz
BC373RL1G Applications
There are a lot of ON Semiconductor
BC373RL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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