BC373ZL1G
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- Mfr.Part #
- BC373ZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 1A TO92
- Stock
- 4,216
- In Stock ：
- 4,216
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 8000
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 1.1V
- Continuous Collector Current :
- 1A
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2006
- Pin Count :
- 3
- Power Dissipation :
- 625mW
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 625mW
- Reach Compliance Code :
- Unknown
- JESD-609 Code :
- e1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 200MHz
- Transistor Type :
- NPN - Darlington
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Additional Feature :
- EUROPEAN PART NUMBER
- Qualification Status :
- Not Qualified
- Packaging :
- Tape and Box (TB)
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 80V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Polarity :
- NPN
- Collector Emitter Voltage (VCEO) :
- 80V
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 12V
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 250μA, 250mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 80V
- Current Rating :
- 1A
- Collector Emitter Breakdown Voltage :
- 80V
- Frequency - Transition :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Base Part Number :
- BC373
- Datasheets
- BC373ZL1G
BC373ZL1G Documents
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC373ZL1G Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.1V @ 250μA, 250mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 12V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BC373ZL1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 250μA, 250mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 200MHz
BC373ZL1G Applications
There are a lot of ON Semiconductor
BC373ZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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