BC373ZL1G
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- Mfr.Part #
- BC373ZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 1A TO92
- Stock
- 4,216
- In Stock ：
- 4,216
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Emitter Voltage (VCEO) :
- 80V
- Polarity :
- NPN
- Emitter Base Voltage (VEBO) :
- 12V
- Max Power Dissipation :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transition Frequency :
- 200MHz
- Additional Feature :
- EUROPEAN PART NUMBER
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Current Rating :
- 1A
- Packaging :
- Tape and Box (TB)
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 250μA, 250mA
- RoHS Status :
- RoHS Compliant
- Published :
- 2006
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- BC373
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 200MHz
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN - Darlington
- Collector Emitter Saturation Voltage :
- 1.1V
- Voltage - Rated DC :
- 80V
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 80V
- Reach Compliance Code :
- Unknown
- Element Configuration :
- Single
- Continuous Collector Current :
- 1A
- hFE Min :
- 8000
- Max Collector Current :
- 1A
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Pin Count :
- 3
- Datasheets
- BC373ZL1G
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC373ZL1G Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.1V @ 250μA, 250mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 12V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BC373ZL1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 250μA, 250mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 200MHz
BC373ZL1G Applications
There are a lot of ON Semiconductor
BC373ZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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