BC373ZL1G
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- Mfr.Part #
- BC373ZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 1A TO92
- Stock
- 4,216
- In Stock ：
- 4,216
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 80V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1.1V
- Transistor Type :
- NPN - Darlington
- JESD-609 Code :
- e1
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 250μA, 250mA
- Max Power Dissipation :
- 625mW
- Pin Count :
- 3
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- EUROPEAN PART NUMBER
- Packaging :
- Tape and Box (TB)
- Frequency - Transition :
- 200MHz
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Transition Frequency :
- 200MHz
- Continuous Collector Current :
- 1A
- Published :
- 2006
- Collector Emitter Voltage (VCEO) :
- 80V
- Voltage - Rated DC :
- 80V
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 12V
- Current Rating :
- 1A
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Element Material :
- SILICON
- Polarity :
- NPN
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Pins :
- 3
- Power Dissipation :
- 625mW
- Base Part Number :
- BC373
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 1A
- Reach Compliance Code :
- Unknown
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- hFE Min :
- 8000
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- BC373ZL1G
BC373ZL1G Documents
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC373ZL1G Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.1V @ 250μA, 250mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 12V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BC373ZL1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 250μA, 250mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 200MHz
BC373ZL1G Applications
There are a lot of ON Semiconductor
BC373ZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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