BC373

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

Power Dissipation :

625mW

Element Configuration :

Single

Collector Base Voltage (VCBO) :

80V

Polarity :

NPN

Mount :

Through Hole

Transition Frequency :

200MHz

Transistor Type :

NPN - Darlington

Number of Pins :

3

Qualification Status :

Not Qualified

Max Power Dissipation :

625mW

Length :

5.2mm

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Number of Elements :

1

Collector Emitter Breakdown Voltage :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

8000

Vce Saturation (Max) @ Ib, Ic :

1.1V @ 250μA, 250mA

HTS Code :

8541.21.00.75

Transistor Application :

AMPLIFIER

Terminal Position :

BOTTOM

Emitter Base Voltage (VEBO) :

12V

Collector Emitter Voltage (VCEO) :

80V

Lead Free :

Contains Lead

Packaging :

Bulk

JESD-609 Code :

e0

Voltage - Rated DC :

80V

Width :

533μm

Continuous Collector Current :

1A

Current Rating :

1A

Pin Count :

3

Frequency - Transition :

200MHz

Published :

2006

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Terminal Finish :

Tin/Lead (Sn/Pb)

Max Collector Current :

1A

Base Part Number :

BC373

Peak Reflow Temperature (Cel) :

240

Height :

5.33mm

Collector Emitter Saturation Voltage :

1.1V

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

30